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dc.creatorTodorović, Goran
dc.creatorMilanović, Vitomir
dc.creatorIkonić, Zoran
dc.creatorIndjin, Dragan
dc.date.accessioned2023-04-07T07:00:25Z
dc.date.available2023-04-07T07:00:25Z
dc.date.issued1997
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttps://grafar.grf.bg.ac.rs/handle/123456789/3063
dc.description.abstractA self-consistent procedure for calculating the energy structure, wave functions, and charge distribution in spherically symmetric semiconductor quantum dots is presented that takes account of both bound and free-electron states. The Schrödinger and Poisson equations are solved iteratively while using the Morse-type parametrized potential to keep the charge neutrality in each iterative step. Numerical calculations performed for a GaAs-Al0.3Ga0.7As based quantum dot indicate that under realistic doping conditions bound states account for most of the charge accumulated in the dot. However, the self-consistent potential very significantly modifies the free-state wave functions and hence the bound-free transition matrix elements.sr
dc.language.isoensr
dc.rightsopenAccesssr
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourcePhysical Review Bsr
dc.titleThe self-consistent calculation of discrete and continuous states in spherical semiconductor quantum dotssr
dc.typearticlesr
dc.rights.licenseBY-NC-NDsr
dc.citation.issue23
dc.citation.volume55
dc.identifier.doi10.1103/PhysRevB.55.15681
dc.identifier.fulltexthttp://grafar.grf.bg.ac.rs/bitstream/id/11613/PhysRevB.55.15681.pdf
dc.type.versionpublishedVersionsr


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