The absorption cross section for bound-free transitions in semiconductor quantum dots
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The absorption cross sections for intraband transitions in spherical semiconductor quantum dots are considered, with the self-consistent effects taken into account. Electronic states are described by the effective mass Schrodinger equation, and the influence of accumulated electronic charge on the electronic structure is accounted for by the conventional numerical self-consistent procedure, i.e. by solving the Schrodinger and the Poisson equations iteratively. The self-consistent Hartree potential is found to push the wave function out of the dot "core" and thus may significantly influence the transition matrix elements, particularly in cases where the upper state is shallow or becomes a resonant state upon including the self-consistency.
Ključne reči:nanostructures / quantum wells / electronic states (localized)
Izvor:Solid State Communications, 1999, 110, 2, 103-107
- Elsevier Science Ltd