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dc.creatorTodorović, Goran
dc.creatorMilanović, V
dc.creatorIkonić, Z
dc.creatorIndjin, D
dc.date.accessioned2019-04-19T14:08:38Z
dc.date.available2019-04-19T14:08:38Z
dc.date.issued1999
dc.identifier.issn0038-1098
dc.identifier.urihttp://grafar.grf.bg.ac.rs/handle/123456789/11
dc.description.abstractThe absorption cross sections for intraband transitions in spherical semiconductor quantum dots are considered, with the self-consistent effects taken into account. Electronic states are described by the effective mass Schrodinger equation, and the influence of accumulated electronic charge on the electronic structure is accounted for by the conventional numerical self-consistent procedure, i.e. by solving the Schrodinger and the Poisson equations iteratively. The self-consistent Hartree potential is found to push the wave function out of the dot "core" and thus may significantly influence the transition matrix elements, particularly in cases where the upper state is shallow or becomes a resonant state upon including the self-consistency.en
dc.publisherElsevier Science Ltd
dc.rightsrestrictedAccess
dc.sourceSolid State Communications
dc.subjectnanostructuresen
dc.subjectquantum wellsen
dc.subjectelectronic states (localized)en
dc.titleThe absorption cross section for bound-free transitions in semiconductor quantum dotsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage107
dc.citation.issue2
dc.citation.other110(2): 103-107
dc.citation.rankM21
dc.citation.spage103
dc.citation.volume110
dc.identifier.doi10.1016/S0038-1098(99)00005-8
dc.identifier.rcubconv_1395
dc.identifier.scopus2-s2.0-0032629391
dc.identifier.wos000079467400007
dc.type.versionpublishedVersion


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