Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot
Само за регистроване кориснике
1998
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well region taken into account. We performed numerical calculation of effective cross sections for photon absorption on electron transitions between ground and continuum states in the conduction band of QD. The energy spectrum and the corresponding wavefunctions of QD are obtained by solving the the effective -mass Schrodinger equation. We used the self-consistent method and the Schrodinger and Poisson equations are solved iteratively. Numerical results have shown a considerable influence on the absorption profile. The magnitude and position of the maximal cross section differ from their values obtained if the space charge in the QD well is neglected. Also, an increase of the donor impurity concentrations of the bulk material had influence on the photon energy corresponding... to the cross section maximum, in contrast to the non-self-consistent calculation.
Кључне речи:
Quantum dot / Quantum well / Electron Continuum States / Absorption Cross SectionИзвор:
Solid State Phenomena, 1998, 61-62Колекције
Институција/група
GraFarTY - JOUR AU - Todorović, Goran AU - Milanović, Vitomir AU - Ikonić, Zoran AU - Indjin, Dragan PY - 1998 UR - https://grafar.grf.bg.ac.rs/handle/123456789/3065 AB - In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well region taken into account. We performed numerical calculation of effective cross sections for photon absorption on electron transitions between ground and continuum states in the conduction band of QD. The energy spectrum and the corresponding wavefunctions of QD are obtained by solving the the effective -mass Schrodinger equation. We used the self-consistent method and the Schrodinger and Poisson equations are solved iteratively. Numerical results have shown a considerable influence on the absorption profile. The magnitude and position of the maximal cross section differ from their values obtained if the space charge in the QD well is neglected. Also, an increase of the donor impurity concentrations of the bulk material had influence on the photon energy corresponding to the cross section maximum, in contrast to the non-self-consistent calculation. T2 - Solid State Phenomena T1 - Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot VL - 61-62 DO - 10.4028/www.scientific.net/SSP.61-62.235 ER -
@article{ author = "Todorović, Goran and Milanović, Vitomir and Ikonić, Zoran and Indjin, Dragan", year = "1998", abstract = "In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well region taken into account. We performed numerical calculation of effective cross sections for photon absorption on electron transitions between ground and continuum states in the conduction band of QD. The energy spectrum and the corresponding wavefunctions of QD are obtained by solving the the effective -mass Schrodinger equation. We used the self-consistent method and the Schrodinger and Poisson equations are solved iteratively. Numerical results have shown a considerable influence on the absorption profile. The magnitude and position of the maximal cross section differ from their values obtained if the space charge in the QD well is neglected. Also, an increase of the donor impurity concentrations of the bulk material had influence on the photon energy corresponding to the cross section maximum, in contrast to the non-self-consistent calculation.", journal = "Solid State Phenomena", title = "Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot", volume = "61-62", doi = "10.4028/www.scientific.net/SSP.61-62.235" }
Todorović, G., Milanović, V., Ikonić, Z.,& Indjin, D.. (1998). Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot. in Solid State Phenomena, 61-62. https://doi.org/10.4028/www.scientific.net/SSP.61-62.235
Todorović G, Milanović V, Ikonić Z, Indjin D. Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot. in Solid State Phenomena. 1998;61-62. doi:10.4028/www.scientific.net/SSP.61-62.235 .
Todorović, Goran, Milanović, Vitomir, Ikonić, Zoran, Indjin, Dragan, "Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot" in Solid State Phenomena, 61-62 (1998), https://doi.org/10.4028/www.scientific.net/SSP.61-62.235 . .