Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot

Abstract

In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well region taken into account. We performed numerical calculation of effective cross sections for photon absorption on electron transitions between ground and continuum states in the conduction band of QD. The energy spectrum and the corresponding wavefunctions of QD are obtained by solving the the effective -mass Schrodinger equation. We used the self-consistent method and the Schrodinger and Poisson equations are solved iteratively. Numerical results have shown a considerable influence on the absorption profile. The magnitude and position of the maximal cross section differ from their values obtained if the space charge in the QD well is neglected. Also, an increase of the donor impurity concentrations of the bulk material had influence on the photon energy corresponding to the cross section maximum, in contrast to the non-self-consistent calculation.