Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells
Само за регистроване кориснике
1998
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in semiconductor quantum wells with two bound states and the resonant state in continuum as the third state. This would significantly extend the range of input radiation photon energies that may be frequency-doubled under resonance conditions in realistic structures. Calculation for the AlGaAs alloy based wells designed for the second harmonic generation of 240meV radiation indicate the usefulness of this approache.
Кључне речи:
Quantum well / Bound-Continuum Transition / Nonlinear SusceptibilityИзвор:
Solid State Phenomena, 1998, 61-62Колекције
Институција/група
GraFarTY - JOUR AU - Indjin, Dragan AU - Mirčetić, Aleksandra AU - Ikonić, Zoran AU - Milanović, Vitomir AU - Todorović, Goran PY - 1998 UR - https://grafar.grf.bg.ac.rs/handle/123456789/3067 AB - The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in semiconductor quantum wells with two bound states and the resonant state in continuum as the third state. This would significantly extend the range of input radiation photon energies that may be frequency-doubled under resonance conditions in realistic structures. Calculation for the AlGaAs alloy based wells designed for the second harmonic generation of 240meV radiation indicate the usefulness of this approache. T2 - Solid State Phenomena T1 - Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells VL - 61-62 DO - 10.4028/www.scientific.net/SSP.61-62.231 ER -
@article{ author = "Indjin, Dragan and Mirčetić, Aleksandra and Ikonić, Zoran and Milanović, Vitomir and Todorović, Goran", year = "1998", abstract = "The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in semiconductor quantum wells with two bound states and the resonant state in continuum as the third state. This would significantly extend the range of input radiation photon energies that may be frequency-doubled under resonance conditions in realistic structures. Calculation for the AlGaAs alloy based wells designed for the second harmonic generation of 240meV radiation indicate the usefulness of this approache.", journal = "Solid State Phenomena", title = "Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells", volume = "61-62", doi = "10.4028/www.scientific.net/SSP.61-62.231" }
Indjin, D., Mirčetić, A., Ikonić, Z., Milanović, V.,& Todorović, G.. (1998). Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells. in Solid State Phenomena, 61-62. https://doi.org/10.4028/www.scientific.net/SSP.61-62.231
Indjin D, Mirčetić A, Ikonić Z, Milanović V, Todorović G. Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells. in Solid State Phenomena. 1998;61-62. doi:10.4028/www.scientific.net/SSP.61-62.231 .
Indjin, Dragan, Mirčetić, Aleksandra, Ikonić, Zoran, Milanović, Vitomir, Todorović, Goran, "Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells" in Solid State Phenomena, 61-62 (1998), https://doi.org/10.4028/www.scientific.net/SSP.61-62.231 . .