Intersubband resonant third harmonic generation in asymmetric semiconductor quantum wells

dc.creator	Indjin, Dragan
dc.creator	Radovanović, Jelena
dc.creator	Milanović, Vitomir
dc.creator	Ikonić, Zoran
dc.creator	Todorović, Goran
dc.date.accessioned	2023-04-07T11:46:50Z
dc.date.available	2023-04-07T11:46:50Z
dc.date.issued	1998
dc.identifier.issn	1012-0394
dc.identifier.uri	https://grafar.grf.bg.ac.rs/handle/123456789/3068
dc.description.abstract	Possibilities for the systematic optimization of step-graded ternary alloys based quantum wells, in respect to third order nonlinear susceptibility ar resonance, are discussed. The use of this method is exemplified on the design of AlxGa1-xAs based quantum wells intended for the resonant third harmonic generation with 116meV pump photon energies, the objective being the largest susceptibility achievable with the chosen material.	sr
dc.language.iso	en	sr
dc.rights	restrictedAccess	sr
dc.source	Solid State Phenomena	sr
dc.subject	Quantum well	sr
dc.subject	Intersubband-Transition	sr
dc.subject	Nonlinear Susceptibility	sr
dc.title	Intersubband resonant third harmonic generation in asymmetric semiconductor quantum wells	sr
dc.type	article	sr
dc.rights.license	ARR	sr
dc.citation.volume	61-62
dc.identifier.doi	10.4028/www.scientific.net/SSP.61-62.223
dc.type.version	publishedVersion	sr