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dc.creatorTodorović, Goran
dc.creatorMilanović, Vitomir
dc.creatorIkonić, Zoran
dc.creatorIndjin, Dragan
dc.date.accessioned2023-04-07T07:05:12Z
dc.date.available2023-04-07T07:05:12Z
dc.date.issued1997
dc.identifier.issn0038-1098
dc.identifier.issn1879-2766
dc.identifier.urihttps://grafar.grf.bg.ac.rs/handle/123456789/3064
dc.description.abstractA self-consistent procedure for calculating the energy structure, wave functions and charge distribution in spherically symmetric semiconductor quantum dots is presented, that takes account of both bound and free electron states. The Schrodinger and Poisson equation are solved iteratively while using the Morse-type parametrized potential to keep the charge neutrality in each iterative step. Numerical calculations performed for GaAs-Al0.3Ga0.7As based quantum dot indicate that bound states account for most of the charge accumulated in the dot, while including the free states is necessary only at larger doping levels to describe the depleted region outside the dot.sr
dc.language.isoensr
dc.rightsopenAccesssr
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourceSolid State Communicationssr
dc.subjectnanostructuressr
dc.subjectquantum wellssr
dc.subjectelectronic states (localized)sr
dc.titleThe self-consistent electronic structure of spherical semiconductor quantum dots including bound and free statessr
dc.typearticlesr
dc.rights.licenseBY-NC-NDsr
dc.citation.issue5
dc.citation.volume103
dc.identifier.doi10.1016/S0038-1098(97)80031-2
dc.identifier.fulltexthttp://grafar.grf.bg.ac.rs/bitstream/id/11614/SolidStateComm.pdf
dc.type.versionpublishedVersionsr


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