Претраживање
Приказ резултата 1-4 од 4
Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot
(Solid State Phenomena, 1998)
In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well ...
Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells
(Solid State Phenomena, 1998)
The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in semiconductor quantum wells with two bound states and the resonant state in continuum as the third state. This would ...
Continuum electron wavefunction shifts in semiconductor quantum dot
(Solid State Phenomena, 1998)
In this paper, the mathematical model for electron wavefunction shifts in the continuum part of the electronic spectrum of a GaAs-Al0.3Ga0.7As based semiconductor quantum dot (QD) is presented. The electron states in the ...
Intersubband resonant third harmonic generation in asymmetric semiconductor quantum wells
(Solid State Phenomena, 1998)
Possibilities for the systematic optimization of step-graded ternary alloys based quantum wells, in respect to third order nonlinear susceptibility ar resonance, are discussed. The use of this method is exemplified on the ...