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Influence of the self-consistent potential on absorption cross section in semiconductor quantum dot
(Solid State Phenomena, 1998)
In this paper the intersubband optical absorption cross sections are calculated for spherically symmetric semiconductor quantum dot (QD), made of GaAs-Al0.3Ga0.7As with the influence of the accumulated charge in the well ...
The self-consistent electronic structure of spherical semiconductor quantum dots including bound and free states
(Solid State Communications, 1997)
A self-consistent procedure for calculating the energy structure, wave functions and charge distribution in spherically symmetric semiconductor quantum dots is presented, that takes account of both bound and free electron ...
Resonantly enhanced bound-continuum intersubband second harmonic generation in optimized asymmetric semiconductor quantum wells
(Physica E: Low-dimensional Systems and Nanostructures, 1999)
A systematic procedure applied to a step-asymmetric quantum well in order to maximize intersubband bound–continuum second-order susceptibility is described. The possibility is explored of obtaining resonantly enhanced ...
Bound-continuum intersubband transition based optical nonlinearities in semiconductor quantum wells
(Solid State Phenomena, 1998)
The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in semiconductor quantum wells with two bound states and the resonant state in continuum as the third state. This would ...
Intersubband resonant third harmonic generation in asymmetric semiconductor quantum wells
(Solid State Phenomena, 1998)
Possibilities for the systematic optimization of step-graded ternary alloys based quantum wells, in respect to third order nonlinear susceptibility ar resonance, are discussed. The use of this method is exemplified on the ...
Continuum electron wavefunction shifts in semiconductor quantum dot
(Solid State Phenomena, 1998)
In this paper, the mathematical model for electron wavefunction shifts in the continuum part of the electronic spectrum of a GaAs-Al0.3Ga0.7As based semiconductor quantum dot (QD) is presented. The electron states in the ...
The self-consistent calculation of discrete and continuous states in spherical semiconductor quantum dots
(Physical Review B, 1997)
A self-consistent procedure for calculating the energy structure, wave functions, and charge distribution in spherically symmetric semiconductor quantum dots is presented that takes account of both bound and free-electron ...
The absorption cross section for bound-free transitions in semiconductor quantum dots
(Elsevier Science Ltd, 1999)
The absorption cross sections for intraband transitions in spherical semiconductor quantum dots are considered, with the self-consistent effects taken into account. Electronic states are described by the effective mass ...
On numerical solution of the Schrödinger equation: the shooting method revisited
(Computer Physics Communications, 1995)
An alternative formulation of the "shooting" method for a numerical solution of the Schrödinger equation is described for cases of general asymmetric one-dimensional potential (planar geometry), and spherically symmetric ...